Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: unveiling distinct resistance states and enhanced performance for phase change random access memory
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DOI: 10.1088/1361-6463/ad6a25
Abstract: This study investigates the phase-change properties of [Ge8Sb92 (25 nm)-Ge2Sb2Te5 (25 nm)]1 multilayer thin films, elucidating three distinct resistance states originating from two structural transitions: initial Sb precipitation and Ge2Sb2Te5-FCC crystallization, followed by Ge2Sb2Te5-FCC to… read more here.
Keywords: resistance; ge2sb2te5; ge8sb92 ge2sb2te5; phase change ... See more keywords