Effective Passivation of Anisotropic 2D GeAs via Graphene Encapsulation for Highly Stable Near-Infrared Photodetectors.
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DOI: 10.1021/acsami.2c20030
Abstract: Germanium arsenic (GeAs) as a promising two-dimensional (2D) semiconducting material has attracted extensive attention. The high carrier mobility and tunable bandgap of GeAs offer broad prospects in electronic and optoelectronic device-related applications. The unique intrinsic… read more here.
Keywords: graphene encapsulation; anisotropic geas; via graphene; passivation anisotropic ... See more keywords