Cobalt germanide nanostructure formation and memory characteristic enhancement in silicon oxide films
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DOI: 10.1016/j.jpcs.2018.04.011
Abstract: Abstract We investigated nano-floating gate memory having a charge trap layer (CTL) composed of cobalt germanide nanostructure (ns-CoGe). A tunneling oxide layer; a CTL containing Co, Ge, and Si; and a blocking oxide layer were… read more here.
Keywords: nanostructure formation; germanide nanostructure; formation; cobalt germanide ... See more keywords