Effect of sintering germanium epilayers on dislocation dynamics: From theory to experimental observation
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DOI: 10.1016/j.actamat.2020.09.047
Abstract: Abstract High-quality germanium epilayers on Si with low threading-dislocation density were achieved by sintering of porous Ge/Si films. The process consists in the formation of porous Ge nanostructures by dislocation-selective electrochemical etching of Ge/Si films,… read more here.
Keywords: sintering germanium; effect sintering; germanium; germanium epilayers ... See more keywords