Modulation of the Charge of Germanium MIS Structures with Fluorine-Containing Insulators
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DOI: 10.1134/s1063782618080201
Abstract: An insulator layer of ErF3, YF3, NdF3, and TmF3 was formed in n-type Ge-based MIS (metal–insulator–semiconductor) structures. It is shown that no negative effective charge is observed in these Ge MIS structures, while the degradation… read more here.
Keywords: modulation charge; charge; charge germanium; mis structures ... See more keywords