Multilayer 2D germanium phosphide (GeP) infrared phototransistor.
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DOI: 10.1364/oe.420431
Abstract: Layered two-dimensional (2D) materials with broadband photodetection capability have tremendous potential in the design and engineering of future optoelectronics devices. To date, studies of 2D semiconductors are actively focused on graphene, black phosphorus, and black… read more here.
Keywords: phosphide gep; gep; germanium phosphide; gep infrared ... See more keywords