A Light‐Hole Germanium Quantum Well on Silicon
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202201192
Abstract: The quiet quantum environment of holes in solid‐state devices is at the core of increasingly reliable architectures for quantum processors and memories. However, due to the lack of scalable materials to properly tailor the valence… read more here.
Keywords: hole; quantum; germanium quantum; light hole ... See more keywords
Germanium quantum well with two subbands occupied: Kinetic properties
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DOI: 10.1063/1.5008414
Abstract: Multisubband transport of the p-type Si0.4Ge0.6/Ge/Si0.4Ge0.6 heterostructure has been investigated by means of magnetotransport measurements at low temperatures and high magnetic fields. Two frequency Shubnikov–de Haas oscillations indicate occupation of two subbands. This allows us… read more here.
Keywords: germanium quantum; subbands occupied; two subbands; occupied kinetic ... See more keywords
Reduced graphene oxide-germanium quantum dot nanocomposite: electronic, optical and magnetic properties.
Sign Up to like & getrecommendations! Published in 2017 at "Nanotechnology"
DOI: 10.1088/1361-6528/aa9299
Abstract: Graphene provides numerous possibilities for structural modification and functionalization of its carbon backbone. Localized magnetic moments can, as well, be induced in graphene by the formation of structural defects which include vacancies, edges, and adatoms.… read more here.
Keywords: germanium quantum; germanium; magnetic properties; reduced graphene ... See more keywords
Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress
Sign Up to like & getrecommendations! Published in 2017 at "Nanoscale Research Letters"
DOI: 10.1186/s11671-017-1913-3
Abstract: Well-behaved Ge quantum well (QW) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) were fabricated on silicon-on-insulator (SOI) substrate. By optimizing the growth conditions, ultrathin fully strained Ge film was directly epitaxially grown on SOI at about 450… read more here.
Keywords: germanium quantum; mobility; strained germanium; pmosfets soi ... See more keywords