Chemical mechanical planarization of germanium using oxone® based silica slurries
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DOI: 10.1016/j.wear.2016.11.030
Abstract: Abstract In this study, the etch rate (ER) and the removal rate (RR) of germanium using oxone based silica chemical mechanical planarization (CMP) slurries have been investigated. In the dissolution study, the Ge ER was… read more here.
Keywords: using oxone; germanium using; oxone based; oxone ... See more keywords