Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors
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DOI: 10.1039/d0ra02265a
Abstract: Exploring the device performance limits is meaningful for guiding practical device fabrication. We propose archetype tunneling field effect transistors (TFETs) with negative capacitance (NC) and use the rigorous ab initio quantum transport simulation to explore… read more here.
Keywords: gese gete; device performance; negative capacitance; performance ... See more keywords