High performance and gate-controlled GeSe/HfS2 negative differential resistance device
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DOI: 10.1039/d1ra07276e
Abstract: Transition metal dichalcogenides (TMDs) have received significant attention owing to their thickness-dependent folded current–voltage (Ids–Vds) characteristics, which offer various threshold voltage values. Owing to these astonishing characteristics, TMDs based negative differential resistance (NDR) devices are… read more here.
Keywords: negative differential; gese hfs2; high performance; hfs2 ... See more keywords