Effects of stacking method and strain on the electronic properties of the few-layer group-IVA monochalcogenide heterojunctions
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DOI: 10.1039/c8ra05086d
Abstract: Group-IV monochalcogenides (GeSe, SnSe, GeS, SnS) are a class of promising monolayer materials for nanoelectronic applications. However, the GeSe monolayer is the only direct semiconductor in the group-IV monochalcogenides, which limits their application in nanoelectronic… read more here.
Keywords: gese snse; group; electronic properties; strain ... See more keywords
A two-dimensional GeSe/SnSe heterostructure for high performance thin-film solar cells
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Materials Chemistry A"
DOI: 10.1039/c9ta01219b
Abstract: Based on first-principles calculations, we demonstrated that a GeSe/SnSe heterostructure has a type-II band alignment and a direct band gap. The predicted photoelectric conversion efficiency (PCE) for the GeSe/SnSe heterostructure reaches 21.47%. read more here.
Keywords: heterostructure high; gese snse; dimensional gese; snse heterostructure ... See more keywords