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   Articles with "gesn" as a keyword



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Room‐Temperature Negative Differential Resistance and High Tunneling Current Density in GeSn Esaki Diodes

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recommendations! Published in 2022 at "Advanced Materials"

DOI: 10.1002/adma.202203888

Abstract: Tunnel field‐effect transistors (TFETs) are a promising candidate for low‐power applications owing to their steep subthreshold swing of sub‐60 mV per decade. For silicon‐ or germanium‐based TFETs, the drive current is low due to the… read more here.

Keywords: negative differential; esaki diodes; gesn; gesn esaki ... See more keywords
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3D Nanoscale Mapping of Short-Range Order in GeSn Alloys.

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recommendations! Published in 2022 at "Small methods"

DOI: 10.1002/smtd.202200029

Abstract: GeSn on Si has attracted much research interest due to its tunable direct bandgap for mid-infrared applications. Recently, short-range order (SRO) in GeSn alloys has been theoretically predicted, which profoundly impacts the band structure. However,… read more here.

Keywords: gesn alloys; range order; gesn; short range ... See more keywords
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Analysis of a Direct-Bandgap GeSn-Based MQW Transistor Laser for Mid-Infrared Applications

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recommendations! Published in 2019 at "Journal of Electronic Materials"

DOI: 10.1007/s11664-019-07418-w

Abstract: We propose the design and analysis of a group-IV material-based (Ge0.84Sn0.16/Si0.09Ge0.8Sn0.11) multiple quantum wells (MQW) transistor laser (TL) for mid-infrared applications. The base region incorporates Ge0.84Sn0.16/Si0.09Ge0.8Sn0.11 MQW structures pseudomorphically grown on silicon through GeSn virtual… read more here.

Keywords: mqw transistor; gesn; mid infrared; transistor laser ... See more keywords
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The Low Temperature Epitaxy of Strained GeSn Layers Using RTCVD System

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recommendations! Published in 2018 at "Electronic Materials Letters"

DOI: 10.1007/s13391-018-0022-5

Abstract: We have investigated the low temperature (LT) growth of GeSn–Ge–Si structures using rapid thermal chemical vapor deposition system utilizing Ge2H6 and SnCl4 as the reactive precursors. Due to inappropriate phenomena, such as, Ge etch and… read more here.

Keywords: low temperature; system; temperature; epitaxy strained ... See more keywords
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Kinetics of plasma oxidation of germanium-tin (GeSn)

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recommendations! Published in 2017 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2017.06.298

Abstract: Abstract The kinetics of plasma oxidation of GeSn at low temperature is investigated. The oxidation process is described by a power-law model where the oxidation rate decreases rapidly from the initial oxidation rate with increasing… read more here.

Keywords: oxidation; kinetics plasma; gesn; gesn oxide ... See more keywords
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Boron-doping induced Sn loss in GeSn alloys grown by chemical vapor deposition

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recommendations! Published in 2018 at "Thin Solid Films"

DOI: 10.1016/j.tsf.2018.06.027

Abstract: Abstract Although the Sn content in GeSn can reach 10% using chemical vapor deposition, the reduction of Sn content by in-situ boron doping and solid phase doping by chemical vapor deposition are observed. The Sn… read more here.

Keywords: gesn; boron; chemical vapor; vapor deposition ... See more keywords
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Ferroelectric Enhanced Performance of GeSn/Ge Dual-nanowire Photodetector.

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recommendations! Published in 2020 at "Nano letters"

DOI: 10.1021/acs.nanolett.0c01039

Abstract: GeSn offers a reduced bandgap than Ge and has been utilized in Si-based infrared photodetectors with extended cutoff wavelength. However, traditional GeSn/Ge heterostructure usually consists defects like misfit dislocations due to the lattice mismatch issue.… read more here.

Keywords: photodetector; dark current; dual nanowire; gesn ... See more keywords
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Epitaxial GeSn obtained by high power impulse magnetron sputtering and the heterojunction with embedded GeSn nanocrystals for SWIR detection.

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recommendations! Published in 2020 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.0c06212

Abstract: GeSn alloys have the potential of extending the Si photonics functionality in short-wave infrared (SWIR) light emission and detection. Epitaxial GeSn layers were deposited on a relaxed Ge buffer on Si(100) wafer by using high… read more here.

Keywords: magnetron sputtering; detection; epitaxial gesn; gesn ... See more keywords
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Recognizing Spatiotemporal Features by a Neuromorphic Network with Highly Reliable Ferroelectric Capacitors on Epitaxial GeSn Film.

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recommendations! Published in 2021 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.1c05815

Abstract: Epitaxial GeSn (epi-GeSn) shows the capability to form ferroelectric capacitors (FeCAPs) with a higher remanent polarization (Pr) than epi-Ge. With the interface engineering by a high-k AlON, the reliability of the epi-GeSn-based FeCAPs is enhanced.… read more here.

Keywords: highly reliable; network; neuromorphic network; epitaxial gesn ... See more keywords
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Amplifying photocurrent of graphene on GeSn film by sandwiching a thin oxide between them

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recommendations! Published in 2020 at "Applied Physics Letters"

DOI: 10.1063/5.0024798

Abstract: We report an investigation of the photoresponse of a GeSn film with a graphene layer placed on top and a thin GeO2 layer sandwiched between them. Both wavelength- and power-dependent amplification of the photocurrent are… read more here.

Keywords: thin oxide; gesn; graphene gesn; gesn film ... See more keywords
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Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature

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recommendations! Published in 2023 at "Journal of Physics D: Applied Physics"

DOI: 10.1088/1361-6463/acd4cb

Abstract: In this work, strong photoluminescence (PL) from physical vapor deposited GeSn on Ge-buffered Si is harvested by pursuing high deposition temperature. High-quality Ge0.938Sn0.062 films are obtained through sputtering epitaxy at a record high temperature of… read more here.

Keywords: strong photoluminescence; photoluminescence physical; temperature; physical vapor ... See more keywords