Room‐Temperature Negative Differential Resistance and High Tunneling Current Density in GeSn Esaki Diodes
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202203888
Abstract: Tunnel field‐effect transistors (TFETs) are a promising candidate for low‐power applications owing to their steep subthreshold swing of sub‐60 mV per decade. For silicon‐ or germanium‐based TFETs, the drive current is low due to the… read more here.
Keywords: negative differential; esaki diodes; gesn; gesn esaki ... See more keywords
Phase‐Coherent Transport in GeSn Alloys on Si
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202400565
Abstract: Germanium‐Tin (GeSn) is a novel semiconductor Group IV alloy that can be tuned from indirect to direct bandgap semiconductors by adjusting the Sn content. This property makes this alloy class attractive for integrated photonic applications… read more here.
Keywords: gesn alloys; transport; gesn; transport gesn ... See more keywords
High‐Mobility p‐Channel Thin‐Film Transistors Based on Polycrystalline GeSn
Sign Up to like & getrecommendations! Published in 2025 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202400901
Abstract: GeSn has gained significant interest as a material for next‐generation electronic devices, including thin‐film transistors (TFTs) because of its excellent electronic properties. In this study, high‐quality polycrystalline GeSn thin films are fabricated on glass substrates… read more here.
Keywords: mobility; gesn; film transistors; thin film ... See more keywords
3D Nanoscale Mapping of Short-Range Order in GeSn Alloys.
Sign Up to like & getrecommendations! Published in 2022 at "Small methods"
DOI: 10.1002/smtd.202200029
Abstract: GeSn on Si has attracted much research interest due to its tunable direct bandgap for mid-infrared applications. Recently, short-range order (SRO) in GeSn alloys has been theoretically predicted, which profoundly impacts the band structure. However,… read more here.
Keywords: gesn alloys; range order; gesn; short range ... See more keywords
Analysis of a Direct-Bandgap GeSn-Based MQW Transistor Laser for Mid-Infrared Applications
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-019-07418-w
Abstract: We propose the design and analysis of a group-IV material-based (Ge0.84Sn0.16/Si0.09Ge0.8Sn0.11) multiple quantum wells (MQW) transistor laser (TL) for mid-infrared applications. The base region incorporates Ge0.84Sn0.16/Si0.09Ge0.8Sn0.11 MQW structures pseudomorphically grown on silicon through GeSn virtual… read more here.
Keywords: mqw transistor; gesn; mid infrared; transistor laser ... See more keywords
The Low Temperature Epitaxy of Strained GeSn Layers Using RTCVD System
Sign Up to like & getrecommendations! Published in 2018 at "Electronic Materials Letters"
DOI: 10.1007/s13391-018-0022-5
Abstract: We have investigated the low temperature (LT) growth of GeSn–Ge–Si structures using rapid thermal chemical vapor deposition system utilizing Ge2H6 and SnCl4 as the reactive precursors. Due to inappropriate phenomena, such as, Ge etch and… read more here.
Keywords: low temperature; system; temperature; epitaxy strained ... See more keywords
Kinetics of plasma oxidation of germanium-tin (GeSn)
Sign Up to like & getrecommendations! Published in 2017 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2017.06.298
Abstract: Abstract The kinetics of plasma oxidation of GeSn at low temperature is investigated. The oxidation process is described by a power-law model where the oxidation rate decreases rapidly from the initial oxidation rate with increasing… read more here.
Keywords: oxidation; kinetics plasma; gesn; gesn oxide ... See more keywords
Boron-doping induced Sn loss in GeSn alloys grown by chemical vapor deposition
Sign Up to like & getrecommendations! Published in 2018 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2018.06.027
Abstract: Abstract Although the Sn content in GeSn can reach 10% using chemical vapor deposition, the reduction of Sn content by in-situ boron doping and solid phase doping by chemical vapor deposition are observed. The Sn… read more here.
Keywords: gesn; boron; chemical vapor; vapor deposition ... See more keywords
Ferroelectric Enhanced Performance of GeSn/Ge Dual-nanowire Photodetector.
Sign Up to like & getrecommendations! Published in 2020 at "Nano letters"
DOI: 10.1021/acs.nanolett.0c01039
Abstract: GeSn offers a reduced bandgap than Ge and has been utilized in Si-based infrared photodetectors with extended cutoff wavelength. However, traditional GeSn/Ge heterostructure usually consists defects like misfit dislocations due to the lattice mismatch issue.… read more here.
Keywords: photodetector; dark current; dual nanowire; gesn ... See more keywords
Room Temperature Lattice Thermal Conductivity of GeSn Alloys
Sign Up to like & getrecommendations! Published in 2024 at "ACS Applied Energy Materials"
DOI: 10.1021/acsaem.4c00275
Abstract: CMOS-compatible materials for efficient energy harvesters at temperatures characteristic for on-chip operation and body temperature are the key ingredients for sustainable green computing and ultralow power Internet of Things applications. In this context, the lattice… read more here.
Keywords: temperature; gesn; conductivity; lattice thermal ... See more keywords
Epitaxial GeSn obtained by high power impulse magnetron sputtering and the heterojunction with embedded GeSn nanocrystals for SWIR detection.
Sign Up to like & getrecommendations! Published in 2020 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.0c06212
Abstract: GeSn alloys have the potential of extending the Si photonics functionality in short-wave infrared (SWIR) light emission and detection. Epitaxial GeSn layers were deposited on a relaxed Ge buffer on Si(100) wafer by using high… read more here.
Keywords: magnetron sputtering; detection; epitaxial gesn; gesn ... See more keywords