Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn
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DOI: 10.1088/1361-6463/abe1e8
Abstract: We systematically investigate the compositional uniformity, degree of strain relaxation (DSR), defect structure and surface morphology of GeSn epitaxial layers with 16% Sn, grown by low temperature molecular beam epitaxy (MBE) on Ge-buffered Si(001) substrates.… read more here.
Keywords: gesn epitaxial; strain relaxation; uniformity; epitaxial layers ... See more keywords