Room‐Temperature Negative Differential Resistance and High Tunneling Current Density in GeSn Esaki Diodes
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DOI: 10.1002/adma.202203888
Abstract: Tunnel field‐effect transistors (TFETs) are a promising candidate for low‐power applications owing to their steep subthreshold swing of sub‐60 mV per decade. For silicon‐ or germanium‐based TFETs, the drive current is low due to the… read more here.
Keywords: negative differential; esaki diodes; gesn; gesn esaki ... See more keywords