Nucleation-controlled low-temperature solid-phase crystallization for Sn-doped polycrystalline-Ge film on insulator with high carrier mobility (∼550 cm2/V s)
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5024307
Abstract: High-speed thin-film transistors (TFTs) are required to develop the next generation of electronics, such as three-dimensional large-scale integrated circuits and advanced system-in-displays. For this purpose, high-carrier-mobility semiconductor films on insulator structures should be fabricated with… read more here.
Keywords: high carrier; carrier mobility; film; gesn films ... See more keywords
Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate*
Sign Up to like & getrecommendations! Published in 2017 at "Chinese Physics B"
DOI: 10.1088/1674-1056/26/11/116802
Abstract: Polycrystalline Ge1−x (poly-Ge1−x Sn x ) alloy thin films with high Sn content (> 10%) were fabricated by cosputtering amorphous GeSn (a-GeSn) on Ge (100) wafers and subsequently pulsed laser annealing with laser energy density… read more here.
Keywords: amorphous gesn; gesn films; gesn; laser annealing ... See more keywords