Tuning direct bandgap GeSn/Ge quantum dots' interband and intraband useful emission wavelength: Towards CMOS compatible infrared optical devices
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.02.038
Abstract: Abstract In this work, interband and intraband optical transitions from direct bandgap strained GeSn/Ge quantum dots are numerically tuned by evaluating the confined energies for heavy holes and electrons in Г-and L-valley. The practically exploitable… read more here.
Keywords: gesn quantum; direct bandgap; emission wavelength; interband intraband ... See more keywords
Design optimization of tensile-strained SiGeSn/GeSn quantum wells at room temperature
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Applied Physics"
DOI: 10.1063/5.0042482
Abstract: A direct bandgap can be engineered in Ge-rich group-IV alloys by increasing Sn content and by introducing tensile strain in GeSn. Here, we combine these two routes in quantum well (QW) structures and systematically analyze… read more here.
Keywords: quantum; tensile strained; gesn quantum; sigesn gesn ... See more keywords
Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field
Sign Up to like & getrecommendations! Published in 2019 at "Micromachines"
DOI: 10.3390/mi10040243
Abstract: The impact of vertical electrical field on the electron related linear and 3rd order nonlinear optical properties are evaluated numerically for pyramidal GeSn quantum dots with different sizes. The electric field induced electron confining potential… read more here.
Keywords: intersubband optical; field; gesn quantum; quantum dots ... See more keywords
Linear and Nonlinear Intersubband Optical Properties of Direct Band Gap GeSn Quantum Dots
Sign Up to like & getrecommendations! Published in 2019 at "Nanomaterials"
DOI: 10.3390/nano9010124
Abstract: Intersubband optical transitions, refractive index changes, and absorption coefficients are numerically driven for direct bandgap strained GeSn/Ge quantum dots. The linear, third-order nonlinear and total, absorption coefficients and refractive index changes are evaluated over useful… read more here.
Keywords: intersubband optical; gesn quantum; index changes; quantum dots ... See more keywords