GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers
Sign Up to like & getrecommendations! Published in 2018 at "ACS Photonics"
DOI: 10.1021/acsphotonics.8b01116
Abstract: GeSn and SiGeSn are promising materials for the fabrication of a group IV laser source offering a number of design options from bulk to heterostructures and quantum wells. Here, we investigate GeSn/SiGeSn multi quantum wells… read more here.
Keywords: multi quantum; gesn sigesn; quantum wells; heterostructure ... See more keywords
Improved Performance in GeSn/SiGeSn TFET by Hetero-Line Architecture With Staggered Tunneling Junction
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2898328
Abstract: Vertical tunneling FET utilizing hetero-line architecture with GeSn/SiGeSn staggered tunneling junction (TJ) is designed and theoretically characterized. Utilizing vertical spacer etching and selective growth techniques, p+ GeSn source/n+ SiGeSn pockets line tunneling can be realized,… read more here.
Keywords: staggered tunneling; sigesn; hetero line; line ... See more keywords