Ferroelectric control of Rashba spin orbit coupling at the GeTe(111)/InP(111) interface.
Sign Up to like & getrecommendations! Published in 2017 at "Nanoscale"
DOI: 10.1039/c7nr05550a
Abstract: GeTe is a prototypical compound of a new class of multifunctional materials, i.e., ferroelectric Rashba semiconductors (FRS). In the present work, by combining the first-principles calculations and Rashba model analysis, we reexamine Rashba spin-orbit coupling… read more here.
Keywords: rashba soc; gete 111; rashba; rashba spin ... See more keywords
Nanoscale phase separation in the oxide layer at GeTe (111) surfaces.
Sign Up to like & getrecommendations! Published in 2022 at "Nanoscale"
DOI: 10.1039/d2nr02261c
Abstract: As a semiconductor ferroelectric, GeTe has become a focus of renewed attention due to the recent discovery of giant Rashba splitting. It already has a wide range of applications, from thermoelectricity to data storage. Its… read more here.
Keywords: oxide layer; phase separation; nanoscale phase; gete 111 ... See more keywords