Low Power Switching through Disorder and Carrier Localization in Bismuth Doped Germanium Telluride Phase Change Memory Nanowires.
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DOI: 10.1021/acsnano.9b08986
Abstract: One of the major problems with phase change memory (PCM) is the high current density required for the crystal-amorphous transformation via a melt-quench process. However, alternative low-energy pathways of amorphization via a defect-assisted process have… read more here.
Keywords: phase change; gete nanowires; carrier; carrier localization ... See more keywords