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Published in 2018 at "Nano Research"
DOI: 10.1007/s12274-017-1785-y
Abstract: Interfacial phase change memory (iPCM) based on GeTe and Sb2Te3 superlattices (SLs) is an emerging contender for non-volatile data storage applications. A detailed knowledge of the atomic structure of these materials is crucial for further…
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Keywords:
van der;
der waals;
cation layers;
sb2te3 based ... See more keywords
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Published in 2020 at "Journal of Non-crystalline Solids"
DOI: 10.1016/j.jnoncrysol.2020.120051
Abstract: Abstract Ge-Sb-Te compounds played an important role in present nonvolatile optical and electrical storages. In our studies, First-principles molecular dynamic methods were used to simulate the amorphization processes of (GeTe)x(x = 1,2,3)-Sb2Te3 compounds and the liquid states…
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Keywords:
principles study;
study structural;
gete sb2te3;
sb2te3 compounds ... See more keywords
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Published in 2024 at "ACS nano"
DOI: 10.1021/acsnano.4c06909
Abstract: Changes in bond types and the reversible switching process between metavalent and covalent bonds are related to the operating mechanism of the phase-change (PC) behavior. Thus, controlling the bonding characteristics is the key to improving…
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Keywords:
sb2te3 superlattices;
gete sb2te3;
performance;
ultrahigh stability ... See more keywords
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Published in 2017 at "ACS Omega"
DOI: 10.1021/acsomega.7b00812
Abstract: Nonvolatile memory, of which phase-change memory (PCM) is a leading technology, is currently a key element of various electronics and portable systems. An important step in the development of conceptually new devices is the class…
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Keywords:
reconfiguration;
van der;
der waals;
gete sb2te3 ... See more keywords
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Published in 2019 at "Nanoscale"
DOI: 10.1039/c9nr03033f
Abstract: Phase change memory (PCM) is a leading candidate for nonvolatile memory applications in the big data era. However, the high power consumption, caused by melting GeTe-Sb2Te3-like phase change materials, hinders their applications. A significant step…
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Keywords:
phase;
change materials;
phase change;
superlattice ... See more keywords
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Published in 2019 at "Optics letters"
DOI: 10.1364/ol.44.001355
Abstract: Multilayered structures of GeTe and Sb2Te3 phase change material, also referred to as interfacial phase change memory (iPCM), provide superior performance for nonvolatile electrical memory technology in which the atomically controlled structure plays an important…
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Keywords:
sb2te3 phase;
generation measurements;
phase change;
phase ... See more keywords