5 MeV Proton irradiation effects on 200 GHz silicon–germanium heterojunction bipolar transistors
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DOI: 10.1080/10420150.2017.1418874
Abstract: ABSTRACT The total dose effects of 5 MeV proton and Co-60 gamma irradiation in the dose range from 1 to 100 Mrad on advanced 200 GHz Silicon–Germanium heterojunction bipolar transistors (SiGe HBTs) are investigated. The SRIM simulation study… read more here.
Keywords: irradiation; ghz silicon; silicon germanium; mev proton ... See more keywords