Gate-induced drain leakage (GIDL) in MFMIS and MFIS negative capacitance FinFETs
Sign Up to like & getrecommendations! Published in 2020 at "Current Applied Physics"
DOI: 10.1016/j.cap.2020.08.008
Abstract: Abstract The gate induced drain leakage (GIDL) effect in negative capacitance (NC) FinFET is investigated. A Landau–Ginzburg–Devonshire equation (which considers the polarization gradient in ferroelectric material) is used to estimate the characteristics of the NC… read more here.
Keywords: gate induced; effect; mfis; gidl ... See more keywords