Investigation of electrical/analog performance and reliability of gate metal and source pocket engineered DG-TFET
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DOI: 10.1007/s00542-020-04845-2
Abstract: Although Tunnel Field Effect Transistors (TFET) offer low leakage current and allow good scalability, but they suffer from low ON-current. Present research paper focuses on the designing of an industry ready TFET that can operate… read more here.
Keywords: gate metal; gme tfet; reliability; tfet ... See more keywords