Dislocation bending in GaN/step-graded (Al,Ga)N/AlN buffer layers on Si(111) investigated by STM and STEM
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DOI: 10.1080/14786435.2018.1516899
Abstract: ABSTRACT The distribution and bending of dislocations in GaN/step-graded (Al,Ga)N/AlN buffer layers grown on Si(111) are investigated by cross-sectional scanning tunnelling microscopy (STM) and scanning transmission electron microscopy (STEM). We observe dislocations with -type Burgers… read more here.
Keywords: buffer layers; aln buffer; microscopy; step graded ... See more keywords