Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm
Sign Up to like & getrecommendations! Published in 2021 at "AEU - International Journal of Electronics and Communications"
DOI: 10.1016/j.aeue.2021.153774
Abstract: Abstract The dc and high frequency performances of Al composition Graded Channel AlGaN/GaN high electron mobility transistor on GaN substrate was investigated and compared with Conventional AlGaN/GaN HEMT. The high frequency characteristics were measured on… read more here.
Keywords: algan gan; gan hemt; drain current; graded channel ... See more keywords
An analytical 2-D model of triple metal double gate graded channel junctionless MOSFET with hetero-dielectric gate oxide stack
Sign Up to like & getrecommendations! Published in 2021 at "Solid State Communications"
DOI: 10.1016/j.ssc.2021.114521
Abstract: In this paper, a two-dimensional analytical model of a laterally graded-channel triplemetal double-gate Junctionless Field Effect Transistor with hetero dielectric gate oxide stack consisting of SiO2 and HfO2 is derived. The model illustrates higher drive… read more here.
Keywords: double gate; analytical model; gate; graded channel ... See more keywords
Tuning the electrical performance of metal oxide thin-film transistors via dielectric interface trap passivation and graded channel modulation doping
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Materials Chemistry C"
DOI: 10.1039/c6tc04709b
Abstract: Passivating trap defects and controlling carrier concentration and doping profiles in the functional dielectric and channel layers is a prerequisite for designing high performance electronic devices. Here, we investigate the effects of dielectric interface trap… read more here.
Keywords: modulation; passivation; graded channel; ingazno ... See more keywords