Liquid phase epitaxy SiGe films on a CVD-grown SiGe/Si (0 0 1) graded film
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DOI: 10.1016/j.jcrysgro.2020.125541
Abstract: Abstract SiGe films were grown on a chemical vapor deposition (CVD)-grown Si0.88Ge0.12/Si (0 0 1) graded film with different growth solution compositions using a temperature interval of 950-940 °C by liquid phase epitaxy (LPE). The LPE films grown… read more here.
Keywords: cvd grown; sige graded; graded film; grown sige ... See more keywords