Interface properties of MIS structures based on hetero-epitaxial graded-gap Hg 1-x Cd x Te with CdTe interlayer created in situ during MBE growth
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DOI: 10.1016/j.spmi.2017.08.025
Abstract: Abstract Heterostructures based on n-Hg1-xCdxTe (x = 0.23–0.40) with near-surface graded-gap layers were grown by molecular beam epitaxy on Si (013) substrates. At 77 K, the admittance of the In/Al2O3/Hg1-xCdxTe metal-insulator-semiconductor (MIS) structures with grown in situ CdTe… read more here.
Keywords: hg1 xcdxte; graded gap; cdte; mis structures ... See more keywords