Collective Control of Potential-Constrained Oxygen Vacancies in Oxide Heterostructures for Gradual Resistive Switching.
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DOI: 10.1002/smll.202301452
Abstract: Filamentary resistive switching in oxides is one of the key strategies for developing next-generation non-volatile memory devices. However, despite numerous advantages, their practical applications in neuromorphic computing are still limited due to non-uniform and indeterministic… read more here.
Keywords: collective control; gradual resistive; lao sto; resistive switching ... See more keywords