The external electric‐field‐induced Schottky‐to‐ohmic contact transition in graphene/As2S3 interface: A study by the first principles
Sign Up to like & getrecommendations! Published in 2020 at "International Journal of Energy Research"
DOI: 10.1002/er.6070
Abstract: Graphene‐based vertical stacking heterojunction has attracted more and more attentions in optoelectronics, nanoelectronics, and spintronics field. A low Schottky barrier height (SBH) or a low‐resistance ohmic contact is desired in practical applications. In our current… read more here.
Keywords: graphene as2s3; field; external electric; ohmic contact ... See more keywords