Graphene/Ferroelectric (Ge-Doped HfO2) Adaptable Transistors Acting as Reconfigurable Logic Gates
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DOI: 10.3390/nano12020279
Abstract: We present an array of 225 field-effect transistors (FETs), where each of them has a graphene monolayer channel grown on a 3-layer deposited stack of 22 nm control HfO2/5 nm Ge-HfO2 intermediate layer/8 nm tunnel… read more here.
Keywords: hfo2; logic gates; doped hfo2; ferroelectric doped ... See more keywords