Monolithically integrated enhancement-mode and depletion-mode β-Ga2O3 MESFETs with graphene gate architectures and their logic applications.
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DOI: 10.1021/acsami.9b19667
Abstract: Ultra-wide bandgap (UWBG) β-Ga2O3 is a promising material for next-generation power electronic devices. An enhancement-mode (E-mode) device is essential for designing power conversion systems with simplified circuitry and minimal loss. The integration of an E-mode… read more here.
Keywords: mode ga2o3; mode; ga2o3; enhancement mode ... See more keywords