Graphoepitaxially Side‐By‐Side Nanofins Along Atomic Terraces for Enhancement‐Mode FinFETs with 108 On/Off Ratio
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DOI: 10.1002/adfm.202400980
Abstract: The innovation of 3D FinFETs using top‐down silicon nanofins represents a significant advancement toward scaling down microchip process nodes to the cutting‐edge 3‐nm level. While bottom‐up semiconductor nanofins also hold promise as building blocks for… read more here.
Keywords: atomic terraces; graphoepitaxially side; side side; side nanofins ... See more keywords