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Published in 2020 at "Journal of Materials Science"
DOI: 10.1007/s10853-020-05343-6
Abstract: Exciton localization phenomena are considered here to comprehend the high internal quantum efficiency in InGaN/GaN multiple-quantum-well structures having discrete quantum dots (QDs) prepared by metal–organic-chemical-vapor deposition method on c -sapphire substrates. Spectroscopic results from the…
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Keywords:
carrier recombination;
carrier;
recombination dynamics;
dynamics green ... See more keywords
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Published in 2023 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/44/4/042801
Abstract: The nano-patterned InGaN film was used in green InGaN/GaN multiple quantum wells (MQWs) structure, to relieve the unpleasantly existing mismatch between high indium content InGaN and GaN, as well as to enhance the light output.…
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Keywords:
ingan gan;
patterned ingan;
green ingan;
multiple quantum ... See more keywords
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Published in 2023 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2023.3264983
Abstract: In this study, we investigated the temperature-dependent photoluminescence characteristics of green InGaN/GaN multiple quantum wells (MQWs) with InGaN/GaN pre-wells and InGaN pre-layers, and the electroluminescence properties of the corresponding mini-LEDs were fabricated and studied. According…
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Keywords:
mini leds;
ingan gan;
green ingan;
multiple quantum ... See more keywords
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Published in 2022 at "Optics letters"
DOI: 10.1364/ol.477968
Abstract: We have demonstrated piezo-phototronic enhanced modulation in green InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with a microwire array (MWA) structure. It is found that an a-axis oriented MWA structure induces more c-axis compressive…
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Keywords:
strain;
piezo phototronic;
green ingan;
ingan gan ... See more keywords