Boosting the efficiency of InGaN-based green LEDs grown on Si through buffer strain engineering
Sign Up to like & getrecommendations! Published in 2024 at "Applied Physics Letters"
DOI: 10.1063/5.0218897
Abstract: InGaN-based micro-light-emitting diodes (LEDs) grown on Si have gained tremendous interest for full-color displays. Strain management is a key challenge for the epitaxial growth of InGaN-based long-wavelength LEDs on Si because the accumulated compressive strain… read more here.
Keywords: efficiency; efficiency ingan; leds grown; ingan based ... See more keywords
InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes.
Sign Up to like & getrecommendations! Published in 2022 at "Optics letters"
DOI: 10.1364/ol.452477
Abstract: High-efficiency GaN-based green LEDs are of paramount importance to the development of the monolithic integration of multicolor emitters and full-color high-resolution displays. Here, the InGaN quantum well with gradually varying indium (In) content was proposed… read more here.
Keywords: gan based; green leds; content green; efficiency ... See more keywords