Effects of vacancy defects on electronic properties of 2D group-IV Tellurides (XTe, X = Si, Ge, Sn and Pb)
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DOI: 10.1016/j.spmi.2019.106326
Abstract: Abstract Vacancy defects are almost inevitable in the synthesis process and have important effects on the physical properties of two-dimension (2D) materials. Using first-principles calculations based on the density functional theory (DFT), we investigated the… read more here.
Keywords: properties group; vacancy; group tellurides; vacancy defects ... See more keywords