Effect of antimony doping on the energy of optical transitions in n-Ge layers grown on Si (001) and Ge (001) substrates
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DOI: 10.1063/1.5140072
Abstract: Comparative studies of the bandgap narrowing in antimony doped Ge layers grown on Si(001) and Ge(001) substrates are reported. The doping level in Ge:Sb layers was varied in such a way as to obtain structures… read more here.
Keywords: bandgap narrowing; grown 001; antimony; layers grown ... See more keywords
Room temperature III–V nanolasers with distributed Bragg reflectors epitaxially grown on (001) silicon-on-insulators
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DOI: 10.1364/prj.7.001081
Abstract: Efficient, scalable, bufferless, and compact III–V lasers directly grown on (001)-oriented silicon-on-insulators (SOIs) are preferred light sources in Si-photonics. In this article, we present the design and operation of III–V telecom nanolaser arrays with integrated… read more here.
Keywords: iii; grown 001; distributed bragg; silicon insulators ... See more keywords