Epitaxial growth and band offsets of β -(ScxGa1− x)2O3 thin films grown on (100) β -Ga2O3 substrate
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DOI: 10.1063/5.0226675
Abstract: β-(ScxGa1−x)2O3 (x = 0–0.36) thin films were epitaxially grown on (100) β-Ga2O3 substrates by oxygen-radical-assisted pulsed-laser deposition. β-(ScxGa1−x)2O3 epilayers were coherently strained up to x = 0.30, although the presence of a structural disorder was implied when x > 0.2. The… read more here.
Keywords: spectroscopy; grown 100; thin films; 100 ga2o3 ... See more keywords