Crack-free GaN-based ultraviolet multiple quantum wells structures grown on AlN/2° misoriented sapphire template
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DOI: 10.1016/j.tsf.2018.08.008
Abstract: Abstract An approach of growing crack-free GaN-based InGaN-multiple quantum wells (MQWs) with emission at 365 nm on AlN template, instead of conventional GaN template, by metal-organic chemical vapor deposition is presented. The AlN template used here… read more here.
Keywords: quantum; misoriented sapphire; microscopy; template ... See more keywords
High free carrier concentration in p-GaN grown on AlN substrates
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DOI: 10.1063/1.4995239
Abstract: A high free hole concentration in III-nitrides is important for next generation optoelectronic and high power electronic devices. The free hole concentration exceeding 1018 cm−3 and resistivity as low as 0.7 Ω cm are reported for p-GaN… read more here.
Keywords: aln substrates; aln; high free; concentration ... See more keywords
Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy
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DOI: 10.3390/nano8090704
Abstract: In this paper, we report the epitaxial growth and material characteristics of AlGaN (Al mole fraction of 10%) on an AlN/nanopatterned sapphire substrate (NPSS) template by hydride vapor phase epitaxy (HVPE). The crystalline quality, surface… read more here.
Keywords: sapphire; microscopy; stress; aln nanopatterned ... See more keywords