Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure
Sign Up to like & getrecommendations! Published in 2020 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2020.105203
Abstract: Abstract Samples comprising 1.3 μm-thick C-doped semi-insulating (SI) GaN layer sandwiched between two n-GaN layers were grown on sapphire or conductive GaN substrates by metal-organic chemical vapor phase epitaxy at varied reactor pressure between 100 and… read more here.
Keywords: mbar; gan substrate; grown gan; pressure ... See more keywords
The influence of residual GaN on two-step-grown GaN on sapphire
Sign Up to like & getrecommendations! Published in 2021 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2021.105903
Abstract: Abstract In this paper, it is found that the residual GaN has a great impact on the two-step-grown GaN on sapphire substrates. The samples which are grown with a conventional system baking process present a… read more here.
Keywords: two step; gan sapphire; residual gan; step grown ... See more keywords
Characterization of Etched and Grown GaN-GaN Schottky Diodes
Sign Up to like & getrecommendations! Published in 2019 at "Microscopy and Microanalysis"
DOI: 10.1017/s1431927619011930
Abstract: GaN-based devices are of much current interest for high-power electronics due to their superior physical and electrical properties, which include high electric breakdown field, high operation temperature, large band gap, and high electron velocity. GaN… read more here.
Keywords: gan substrates; uid gan; microscopy; schottky diodes ... See more keywords
Anomalous behavior of electrically active defects near EC−0.5 eV in MOCVD, as-grown GaN
Sign Up to like & getrecommendations! Published in 2019 at "AIP Advances"
DOI: 10.1063/1.5086796
Abstract: The present work reports on a distinct and very reproducible bistable-like behavior of two defects at around EC − 0.5 eV in MOCVD-grown GaN. The kinetics of the thermally activated transformation between the two states… read more here.
Keywords: anomalous behavior; mocvd grown; electrically active; active defects ... See more keywords
Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5098965
Abstract: We studied deep levels in quartz-free hydride-vapor-phase epitaxy (QF-HVPE)-grown homoepitaxial n-type GaN layers within which three electron and eight hole traps were detected. The dominant electron and hole traps observed in the QF-HVPE-grown GaN layers… read more here.
Keywords: gan layers; hole traps; quartz free; spectroscopy ... See more keywords
Impact of dislocations on the thermal conductivity of gallium nitride studied by time-domain thermoreflectance
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Applied Physics"
DOI: 10.1063/1.5126970
Abstract: GaN thermal conductivity (κGaN) of hydride vapor phase epitaxy grown GaN (HVPE GaN), high nitride pressure grown GaN (HNP GaN), and metal-organic chemical vapor deposition grown GaN on sapphire (GaN/sapphire) and on Si(111) (GaN/Si) are… read more here.
Keywords: gan sapphire; time domain; thermal conductivity; gan ... See more keywords
Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Applied Physics"
DOI: 10.1063/5.0053766
Abstract: The propagation behavior of threading dislocations (TDs) and the effects of Burgers vectors in hydride vapor phase epitaxy (HVPE) GaN bulk crystals generated on Na-flux-grown GaN and in a commercially available HVPE-grown GaN bulk crystal… read more here.
Keywords: microscopy; threading dislocations; flux grown; gan bulk ... See more keywords