Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy
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DOI: 10.1063/1.4989884
Abstract: We report structural properties as well as electrical and optical behaviors of beryllium (Be)-doped InGaAsP lattice-matched to InP grown by gas source molecular beam epitaxy. P type layers present a high degree of compensation on… read more here.
Keywords: gas source; compensation; grown gas; source molecular ... See more keywords