Influence of Post-Annealing on Properties of α-Ga2O3 Epilayer Grown by Halide Vapor Phase Epitaxy
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DOI: 10.1149/2.0051907jss
Abstract: Effect of annealing to realize high-quality α-Ga2O3 epilayers grown by halide vapor phase epitaxy has been studied. The structural and optical properties of α-Ga2O3 changed with changing annealing duration. In particular, for an annealing duration… read more here.
Keywords: phase epitaxy; properties ga2o3; halide vapor; grown halide ... See more keywords