Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition
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DOI: 10.1088/1361-6641/ab4b93
Abstract: InGaN quantum dots (QDs) were grown by metalorganic chemical vapor deposition (MOCVD) and shown to exhibit a bimodal size distribution. Atom probe tomography (APT) was used to characterize the dots in conjunction with atomic force… read more here.
Keywords: metalorganic chemical; chemical vapor; vapor deposition; ingan quantum ... See more keywords