Trap-assisted high responsivity of a phototransistor using bi-layer MoSe2 grown by molecular beam epitaxy
Sign Up to like & getrecommendations! Published in 2019 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2019.07.116
Abstract: Abstract The transition metal dichalcogenides (TMDs) have great optical absorption and mobility in a subnanometer thickness. The MoSe2 among TMDs is significantly interested as an active layer in optical devices because it is superior to… read more here.
Keywords: layer mose2; molecular beam; beam epitaxy; using layer ... See more keywords
Ternary Pb1−xCdxSe films grown by molecular beam epitaxy on GaAs/ZnTe hybrid substrates
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.10.053
Abstract: Abstract Thin epitaxial Pb1−xCdxSe films with cadmium content x ≤ 0.36 have been grown by molecular beam epitaxy (MBE) on highly resistive, lattice matched (0 0 1) ZnTe/GaAs hybrid substrates. The High Resolution X-ray Diffraction (HRXRD) indicates that the… read more here.
Keywords: pb1 xcdxse; molecular beam; grown molecular; xcdxse films ... See more keywords
Mid-Infrared Photodetection of Type-II Dirac Semimetal 1T-PtTe2 Grown by Molecular Beam Epitaxy.
Sign Up to like & getrecommendations! Published in 2021 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.1c04598
Abstract: Mid-infrared (MIR) photodetection is of significance in civil and military applications because it shows superiority in absorbing the vibration of various molecules and covering atmospheric transmission windows. Recently, the PtTe2, a typical type-II Dirac semimetal,… read more here.
Keywords: ptte2; type dirac; grown molecular; photodetection ... See more keywords
1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy
Sign Up to like & getrecommendations! Published in 2017 at "ACS Photonics"
DOI: 10.1021/acsphotonics.7b00240
Abstract: As a promising new class of near-infrared light emitters, GaAsBi laser diodes (LDs) are considered to have a high energy efficiency and an insensitive temperature dependence of the band gap. In this paper, we realize… read more here.
Keywords: temperature; gaas quantum; gaas; grown molecular ... See more keywords
Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy.
Sign Up to like & getrecommendations! Published in 2022 at "Nanoscale"
DOI: 10.1039/d2nr00458e
Abstract: Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we report the structural and electronic properties of single layer WSe2… read more here.
Keywords: band; terminated gaas; molecular beam; grown molecular ... See more keywords
Physicochemical analysis of Bi2Te3 – (Fe, Eu) – Bi2Te3 junctions grown by molecular beam epitaxy method
Sign Up to like & getrecommendations! Published in 2017 at "AIP Advances"
DOI: 10.1063/1.4978005
Abstract: Topological insulators (TI) are a class of materials gaining in importance due to their unique spin/electronic properties, which may allow for the generation of quasiparticles and electronic states which are not accessible in classical condensed-matter… read more here.
Keywords: beam epitaxy; molecular beam; bi2te3; grown molecular ... See more keywords
Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates
Sign Up to like & getrecommendations! Published in 2021 at "Photonics"
DOI: 10.3390/photonics8060215
Abstract: Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are… read more here.
Keywords: microscopy; molecular beam; beam epitaxy; grown molecular ... See more keywords