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Published in 2019 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2019.06.006
Abstract: Abstract The role of the TMG flow rate on the properties of the GaN layer grown by MOVPE on (001) and (11n)/n=2,3 GaAs substrates were investigated. The surface morphology, crystalline quality and optical property were…
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Keywords:
tmg flow;
role tmg;
flow rate;
gan layer ... See more keywords