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Role of the TMG flow rate on the GaN layer properties grown by MOVPE on (hkl) GaAs substrates

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Published in 2019 at "Materials Science in Semiconductor Processing"

DOI: 10.1016/j.mssp.2019.06.006

Abstract: Abstract The role of the TMG flow rate on the properties of the GaN layer grown by MOVPE on (001) and (11n)/n=2,3 GaAs substrates were investigated. The surface morphology, crystalline quality and optical property were… read more here.

Keywords: tmg flow; role tmg; flow rate; gan layer ... See more keywords