Raman mapping of hexagonal hillocks in N-polar GaN grown on c-plane sapphire
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.02.012
Abstract: Abstract A large amount of huge hexagonal hillocks were observed on the surface of N-polar GaN film grown on c-plane sapphire substrate by MOCVD. The distribution of residual stress and dislocation density in a typical… read more here.
Keywords: polar gan; grown plane; hillock; residual stress ... See more keywords
Pure-phase κ-Ga2O3 layers grown on c-plane sapphire by halide vapor phase epitaxy
Sign Up to like & getrecommendations! Published in 2021 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2021.106845
Abstract: Abstract κ-gallium oxide (Ga2O3) layers were hetero-epitaxially grown on c-plane sapphire substrates by halide vapor phase epitaxy (HVPE). Pure (001)-oriented κ-Ga2O3 with high crystal quality was obtained with this method on sapphire at 800 °C. Furthermore,… read more here.
Keywords: grown plane; ga2o3 layers; ga2o3; sapphire ... See more keywords