Preparation and properties of GaN:Al layers grown by radio-frequency magnetron sputter epitaxy
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DOI: 10.1016/j.vacuum.2017.01.017
Abstract: Abstract Ga-rich Al x Ga 1– x N ( x « 0.01) (GaN:Al) single-crystalline layers were grown by radio-frequency magnetron sputter epitaxy using N 2 /Ar gas and a 6-N grade AlGa alloy target. When… read more here.
Keywords: gan layers; frequency magnetron; radio frequency; grown radio ... See more keywords