Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes
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DOI: 10.1109/jeds.2020.2963902
Abstract: Vertical GaN-on-GaN Schottky barrier diodes based on as-grown and regrown samples were fabricated to investigate the effects of the etch-then-regrow process on device performance. The surface roughness increased slightly after dry etching and decreased after… read more here.
Keywords: gan gan; grown regrown; gan; gan schottky ... See more keywords