High mobility approaching the intrinsic limit in Ta-doped SnO2 films epitaxially grown on TiO2 (001) substrates
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DOI: 10.1038/s41598-020-63800-3
Abstract: Achieving high mobility in SnO2, which is a typical wide gap oxide semiconductor, has been pursued extensively for device applications such as field effect transistors, gas sensors, and transparent electrodes. In this study, we investigated… read more here.
Keywords: high mobility; mobility; doped sno2; epitaxially grown ... See more keywords