Molecular beam epitaxy growth of AlAs1−x Bi x
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DOI: 10.1088/1361-6641/aacf38
Abstract: High quality AlAs1-xBix layers with Bi composition of 3%-10.5% have been successfully grown by molecular beam epitaxy. The Bi incorporation is confirmed by Rutherford backscattering spectroscopy. For a 400 nm thick AlAsBi layer, the strain… read more here.
Keywords: molecular beam; growth alas1; epitaxy growth; beam epitaxy ... See more keywords