Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface
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DOI: 10.3390/nano13020231
Abstract: This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences of the duration of the transition stage… read more here.
Keywords: growth germanium; growth; epitaxial growth; germanium silicon ... See more keywords